The 2N3055 is a robust NPN bipolar junction transistor (BJT) designed for high power applications, featuring a maximum collector-emitter voltage of 60V and a current rating of 15A. It is widely used in power amplifiers and high-current switching circuits. Key Features:
- Type: NPN
- Collector-Emitter Voltage: 60V
- Collector Current: 15A
- High power capability
- Power amplifiers
